? by semikron 0698 b 16 C 17 absolute maximum ratings symbol conditions 1) values units inverter v ces v ges i c i cm i f = Ci c i fm = Ci cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 600 20 17 / 12 34 / 24 20 / 15 40 / 30 v v a a a a bridge rectifier v rrm i d i fsm i 2 t t heatsink = 80 c t p = 10 ms; sin. 180 , t j = 25 c t p = 10 ms; sin. 180 , t j = 25 c 800 12 370 680 v a a a 2 s t j t stg v isol ac, 1 min. C 40 . . . + 150 C 40 . . . + 125 2500 c c v characteristics symbol conditions 1) min. typ. max. units igbt - inverter v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 10 a t j = 25 (125) c v cc = 300 v; v ge = 15 v i c = 10 a; t j = 125 c r gon = r goff = 100 w inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt C C C C C C C C 2,1(2,2) 40 60 250 500 1,2 0,57 C 2,7(2,8) 80 120 400 750 C C 2,3 v ns ns ns ns mj nf k/w diode 2) - inverter v f = v ec v to r t i rrm q rr e off r thjh i f = 10 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 10 a, v r = C 300 v di f /dt = C 200 a/ m s v ge = 0 v, t j = 125 c per diode C C C C C C C 1,45(1,4) 0,85 55 13 1,5 0,45 C 1,7(1,7) 0,9 80 C C C 2,7 v v m w a m c mj k/w diode - rectifier v f r thjh i f = 25 a, t j = 25 c per diode C C 1,2 C C 2,6 v k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 w shunts (skiip 11 nec 06 i) r cs(dc) r cs(ac) 5 % 4) 1 % 47 22 m w m w mechanical data m 1 case case to heatsink, si units mechanical outline see page b 16 C 5 2C m1 2,5 nm skiip 11 nec 06 - skiip 11 nec 06 i miniskiip 1 semikron integrated intelligent power skiip 11 nec 06 skiip 11 nec 06 i 3) 1-phase bridge rectifier + 3-phase bridge inverter case m1 ul recognized file no. e63532 ? common characteristics see page b16C3 ? specification of shunts and temperature sensor see part a options ? also available with faster igbts (type ... 063), data sheet on request 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery) 3) with integrated dc and/or ac shunts 4) accuracy of pure shunt, please note that for dc shunt no separate sensing contact is used.
b 16 C 18 0698 ? by semikron fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) t j = 125 c v ce = 300 v v ge = 15 v i c = 10 a t j = 125 c v ce = 300 v v ge = 15 v r g = 100 w i cpuls = 10 a v ge = 0 v f = 1 mhz fig. 1 typ. output characteristic, t p = 80 m s; 25 c fig. 2 typ. output characteristic, t p = 80 m s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce
? by semikron 0698 b 16 C 3 fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v fig. 7 rated current of the igbt i cop / i c = f (t h ) t j = 150 c v ge = 3 15 v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini0607 t h [c] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode 2. common characteristics of miniskiip miniskiip 600 v
3. circuits, cases, layout for the printed circuit board miniskiip 1 skiip 10 nec 06 ... skiip 11 nec 06 ... circuit case m1 layout and connections for the customers printed circuit board note: the shunts are available only by option i
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